'3D NAND'에 해당되는 글 6건

  1. 2020.02.01 WD, 112단 TLC/QLC 제5세대 3D NAND 플래시 BiCS5 개발 by 랩터 인터내셔널
  2. 2018.03.01 WD, 최대 2TB의 3D NAND채용 NVMe SSD 2종 발표 by 랩터 인터내셔널
  3. 2017.12.25 삼성 PM981 SSD 리뷰 : Next Generation Controller And 3D NAND by 랩터 인터내셔널
  4. 2016.06.30 3D NAND 탑재, 마이크론 크루셜 MX300 750GB SSD 리뷰 by 랩터 인터내셔널
  5. 2016.06.02 COMPUTEX 2016) 마이크론의 3D 낸드플래시 SSD, BALLISTIX TX3 by 랩터 인터내셔널
  6. 2016.04.23 인텔, 3D NAND 기술을 채용한 DC P3520/3320 SSD 발표 by 랩터 인터내셔널

미국 웨스턴 디지털(Western Digital)은 1월 30일, 제5세대 3D NAND 플래시에 해당하는 BiCS5 개발에 성공했다고 발표했다.

 

개발한 BiCS5는 메모리 홀 기술이 제2세대로 이행되고 프로세스나 3D NAND 셀이 개선되면서 셀 배열의 밀도가 크게 향상됐고, 더불어 셀의 적층 수도 앞선 세대 BiCS4의 96단에서 112단으로 증가했다.

 

이로써 웨이퍼당 비트 수가 최대 40% 증가해 비용을 줄이고 설계 개선이 이뤄지며 읽기/쓰기 성능이 최대 50% 고속화했다고 밝혔다.

 

BiCS5는 1셀당 3bit의 데이터를 기록하는 TLC(Triple Level Cell)와 4bit를 기록하는 QLC(Quadruple Level Cell)를 이용하여 제조되며 TLC 512Gbit 칩의 초기 생산을 이미 시작했고, 본격적인 양산은 2020년 하반기를 예정하고 있다.

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WD는 "Western Digital PC SN720" 및 "Western Digital PC SN520" NVMe SSD 제품 2종을 발표했다.


SN720은 NVMe 3.0x4 접속 SSD. 3D NAND를 한쪽 면에 실장한 M.2 2280 폼 팩터를 채용하고 256GB/512GB/1TB/2TB의 용량이 준비된다.


성능은 시퀀셜 읽기 최대 3,400MB/s, 쓰기 2,800MB/s, 랜덤 읽기 최대 500,000IOPS, 쓰기 400,000IOPS로 4K/VR 비디오 편집 등의 애플리케이션을 실행하는 시스템에 최적으로 한다. 총 400TBW.


SN520은 NVMe 3.0x2 접속 SSD. 소형 시스템 전용의 임베디드 용도를 상정한 SSD로 M.2 2280/2242/2230 폼 팩터에서 128GB/256GB/512GB의 용량이 준비된다.


제 3세대 독자적인 계층 캐시 아키텍처 "nCache 3.0"을 갖추고 있어 저전력 호스트의 엄격한 전원 구조 요구와 요건을 충족하도록 최적화되고 있다.


성능은 시퀀셜 읽기 최대 1,700MB/s, 쓰기 1,400MB/s, 랜덤 읽기 최대 270,000IOPS, 쓰기 280,000IOPS. 총 300TBW.

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Samsung OEM Client PCIe SSD History
 ControllerNAND FlashNotesConsumer
Variant
XP941S4LN053X012D MLCPCIe 2.0, AHCI-
SM951UBX2D MLCAHCI or NVMe950 PRO
PM9512D TLC -
SM961Polaris2D & 3D MLC 960 PRO
PM9613D TLC 960 EVO
PM971Photon3D TLCBGA SSD, PCIe 3 x2-
PM981Phoenix3D TLC 980 Evo?


삼성 PM981 SSD 스펙

컨트롤러 : Samsung Phoenix

낸드플래시 : 64층 TLC V-NAND

인터페이스 : NVMe


테스트 시스템

AnandTech 2017 SSD Testbed
CPUIntel Xeon E3 1240 v5
MotherboardASRock Fatal1ty E3V5 Performance Gaming/OC
ChipsetIntel C232
Memory4x 8GB G.SKILL Ripjaws DDR4-2400 CL15
GraphicsAMD Radeon HD 5450, 1920x1200@60Hz
SoftwareWindows 10 x64, version 1703
Linux kernel version 4.12, fio version 2.21


ATSB - The Destroyer (Data Rate)

The average data rate of the 1TB Samsung PM981 on The Destroyer is comparable to the 960 EVO 1TB and well ahead of any competing TLC-based drives like the Toshiba XG5. The 512GB PM981 is slower by a typical amount, and still faster than any of the non-Samsung drives of that size.

ATSB - The Destroyer (Average Latency)ATSB - The Destroyer (99th Percentile Latency)

The 1TB PM981 shows a substantial improvement over the average and 99th percentile latency scores of the 960 EVO, putting it close to the 960 PRO. The 512GB PM981 isn't as impressive, with latency scores that fall behind most MLC-based NVMe SSDs.

ATSB - The Destroyer (Average Read Latency)ATSB - The Destroyer (Average Write Latency)

The 1TB PM981 sets a new record (among flash-based SSDs) for average read latency on The Destroyer, shaving a few microseconds off the 960 PRO's performance. The average write latency can't quite keep up with the MLC-based 960 PRO that doesn't use SLC write caching. The smaller 512GB PM981 is competitive with most similarly-sized MLC-based drives, but slower than Samsung's 960 PRO.

ATSB - The Destroyer (99th Percentile Read Latency)ATSB - The Destroyer (99th Percentile Write Latency)

Samsung's 99th percentile read latency is nothing special, though the PM981 does offer clear improvement over the 960 EVO. The 99th percentile write latency of the 1TB PM981 is excellent and far better than the 1TB 960 EVO. The 512GB PM981 is clearly the fastest TLC-based drive of that size that we've tested, but it doesn't quite match the 99th percentile latency scores of the MLC-based competition.


ATSB - Heavy (Data Rate)

On the Heavy test, the average data rates of the 512GB Samsung PM981 again lag slightly behind most MLC-based NVMe drives but are clearly ahead of the competitors' TLC drives. The 1TB PM981 is behaving a bit oddly with slower than expected performance after a secure erase, but great performance when filled.

ATSB - Heavy (Average Latency)ATSB - Heavy (99th Percentile Latency)

The average latency of the 1TB PM981 is a significant improvement over the 1TB 960 EVO, while the 512GB PM981 doesn't stand out from the other 512GB drives. The 99th percentile latencies aren't particularly good, and the 512GB PM981 scores worse than almost all the other PCIe SSDs of that size.

ATSB - Heavy (Average Read Latency)ATSB - Heavy (Average Write Latency)

The average write latency of the 1TB PM981 is excellent especially when the test is run on an empty drive. Average read latencies for both drives are decent but aren't a big improvement over their predecessors.

ATSB - Heavy (99th Percentile Read Latency)ATSB - Heavy (99th Percentile Write Latency)

The 99th percentile read latencies are one of the few ATSB scores where the TLC-based nature of the PM981 shines through. Many MLC-based SSDs are much better at keeping read latency under control, and the TLC-based Toshiba XG5 also scores much better than the PM981 here. The 99th percentile write latency of the 1TB PM981 is pretty good, following suit to the average write latency, while the 512GB model could use some improvement.


ATSB - Light (Data Rate)

Both capacities of the Samsung PM981 offer great average data rates on the Light test. Their performance when full or empty is improved over the Samsung 960 EVO and comes close to the 960 PRO.

ATSB - Light (Average Latency)ATSB - Light (99th Percentile Latency)

The average and 99th percentile latency scores of the PM981s aren't much of an improvement over Samsung's last generation, but this is still a new record for flash-based SSDs, even though the PM981 is using TLC NAND.

ATSB - Light (Average Read Latency)ATSB - Light (Average Write Latency)

The average write latency of the PM981s is great whether the test is run on a full or empty drive, but the average read latency is slightly worse than the 960 PRO when the test is run on a full drive.

ATSB - Light (99th Percentile Read Latency)ATSB - Light (99th Percentile Write Latency)

The 99th percentile read latency of the PM981s is record-setting when the Light test is run on an empty drive, but only the 1TB sets a record when the test is run on a full drive. The 99th percentile write latency is excellent on both drives in either test scenario.



Burst 4kB Random Read (Queue Depth 1)

The burst random read performance of the Samsung PM981 is great by the standards of TLC SSDs, but is surpassed by several MLC-based drives, including the Phison E7-based Patriot Hellfire with planar MLC NAND.

Our sustained random read performance is similar to the random read test from our 2015 test suite: queue depths from 1 to 32 are tested, and the average performance and power efficiency across QD1, QD2 and QD4 are reported as the primary scores. Each queue depth is tested for one minute or 32GB of data transferred, whichever is shorter. After each queue depth is tested, the drive is given up to one minute to cool off so that the higher queue depths are unlikely to be affected by accumulated heat build-up. The individual read operations are again 4kB, and cover a 64GB span of the drive.

Sustained 4kB Random Read

On the longer random read test that includes some higher queue depths, the PM981 comes a bit closer to the standard set by Samsung's MLC drives, and it outperforms all the non-Samsung drives.

Both capacities of the PM981 show performance scaling with queue depth in the typical manner for a high-performance drive, though the 512GB model has passed an inflection point by QD32 and is approaching saturation.

Random Write Performance

Our test of random write burst performance is structured similarly to the random read burst test, but each burst is only 4MB and the total test length is 128MB. The 4kB random write operations are distributed over a 16GB span of the drive, and the operations are issued one at a time with no queuing.

Burst 4kB Random Write (Queue Depth 1)

There are a few MLC-based SSDs that offer substantially higher burst random write performance than the Samsung PM981, but it is on par with most high-end drives including the Samsung 960 PRO.

As with the sustained random read test, our sustained 4kB random write test runs for up to one minute or 32GB per queue depth, covering a 64GB span of the drive and giving the drive up to 1 minute of idle time between queue depths to allow for write caches to be flushed and for the drive to cool down.

Sustained 4kB Random Write

On the longer random write test, the 1TB PM981 stands out with clearly higher performance than the Samsung 960 series could manage. The 512GB PM981 is slower but still definitely performing like a high-end drive.

The random write performance of the 1TB PM981 scales very well with increasing queue depth. As compared to the Samsung 960 series, it also reaches its plateau around QD8, but is providing much higher throughput by that point. The 512GB model runs out of SLC cache during portions of this test so its performance is much lower and less steady.


Burst 128kB Sequential Read (Queue Depth 1)

The burst sequential read performance of the Samsung PM981 doesn't quite set a new record, but it's pretty close to the top performer and very far ahead of any non-Samsung drive.

Our test of sustained sequential reads uses queue depths from 1 to 32, with the performance and power scores computed as the average of QD1, QD2 and QD4. Each queue depth is tested for up to one minute or 32GB transferred, from a drive containing 64GB of data.

Sustained 128kB Sequential Read

On the longer test with higher queue depths, the best MLC-based drives pull ahead of the PM981 and even the 960 EVO has a slight advantage.

The 1TB PM981 starts out with almost the same performance as the 1TB 960 EVO, but the PM981's performance falls off a bit during the first half of the test while the 960 EVO remains steady. The 512GB PM981 doesn't experience any slowdown, but it is slower than the 1TB model throughout the test.

Sequential Write Performance

Our test of sequential write burst performance is structured identically to the sequential read burst performance test save for the direction of the data transfer. Each burst writes 128MB as 128kB operations issued at QD1, for a total of 1GB of data written to a drive containing 16GB of data.

Burst 128kB Sequential Write (Queue Depth 1)

The PM981s both deliver the same record-setting burst sequential write performance that is a marked improvement over the best of Samsung's last generation, and far ahead of any competing flash-based SSD.

Our test of sustained sequential writes is structured identically to our sustained sequential read test, save for the direction of the data transfers. Queue depths range from 1 to 32 and each queue depth is tested for up to one minute or 32GB, followed by up to one minute of idle time for the drive to cool off and perform garbage collection. The test is confined to a 64GB span of the drive.

Sustained 128kB Sequential Write

On the longer sequential write test, the 512GB PM981 falls behind most of the rest of the Samsung drives but the 1TB model remains on top, ahead of even the 960 PROs.

The 1TB PM981 hits full write speed at QD2 and stays there for the rest of the test, holding on to its lead over the 960 PRO. The 512GB PM981 runs out of SLC write cache early on and its performance bounces around with the garbage collection cycles.


Mixed 4kB Random Read/Write

The mixed random I/O performance of the Samsung PM981 is a big improvement over last generation's 960 EVO. The 1TB PM981 beats out even the MLC-based 960 PRO, while the smaller 512GB PM981 is a bit slower than the 960 PRO of the same size.

As the proportion of writes in the mixed workload increases, the PM981 steadily gains performance, pulling further and further ahead of the 960 EVO. The 512GB PM981's main weakness is that its performance doesn't hit quit as high a peak during the final phases of the test when the workload is almost entirely random writes.

Mixed Sequential Performance

Our test of mixed sequential reads and writes differs from the mixed random I/O test by performing 128kB sequential accesses rather than 4kB accesses at random locations, and the sequential test is conducted at queue depth 1. The range of mixes tested is the same, and the timing and limits on data transfers are also the same as above.

Mixed 128kB Sequential Read/Write

The 512GB PM981 matches the mixed sequential performance of the MLC-based 512GB 960 PRO, while the 1TB PM981 is substantially faster than the 960 PRO or any other flash-based SSD.

The Samsung 960 PRO 1TB outperforms the 1TB PM981 during the early read-heavy phases of the mixed sequential test, but then its performance drops off precipitously while the PM981 retains its performance until later in the test. The 512GB PM981 averages almost exactly the same performance as the 512GB 960 PRO, but with substantial differences in the details: the 960 PRO is faster at either end of the test, but the PM981 has a significant advantage for more even mixes of reads and writes.


출처 - https://www.anandtech.com

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Advanced Features

  • Dynamic write acceleration
  • Redundant Array of Independent NAND (RAIN)
  • Multistep data integrity algorithm
  • Adaptive thermal protection
  • Power-loss protection
  • Data path protection
  • Active garbage collection
  • TRIM support
  • Self-Monitoring and Reporting Technology (SMART)
  • LDPC Error Correction Code (ECC)
  • Device sleep support
  • AES 256-bit hardware encryption (TCG Opal 2.0 and IEEE-1667-compliant)


크루셜 MX300은 컨트롤러에 Marvell 88SS1074 4-Channel "Dean", 디램은 1GB LPDDR3 1333MHz, 낸드는 마이크론의 32단 3D TLC 384Gbit 칩을 탑재 합니다.




제품의 시퀀셜 읽기/쓰기 성능은 각각 530 MB/s -  510 MB/s입니다. 그외 스펙은,


Random Read : 92,000 IOPS

Random Write : 83,000 IOPS
Endurance : 220 TBW (120GB Per Day For 5 Years)
Warranty : 3 Years



출처 - http://www.tomshardware.com

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미국 Micron Technology는 COMPUTEX TAIPEI 2016 개막에 맞춰 메모리 브랜드 "BALLISTIX"를 SSD에도 적용한다는 새로운 전략을 공개했다.


BALLISTIX 브랜드의 SSD로 발표된 것이 NVMe M.2 SSD "BALLISTIX TX3". 플래시 메모리에 마이크론의 3D 낸드를 채용한 점이 특징. 현 시점에서 제품의 상세 내용은 확인할 수 없지만 6월 2일(현지시간) 언론을 대상으로 한 설명회가 개최 될 예정이며 그쪽에서 상세히 밝히기로 되어 있다.


그 외에도 크루셜 브랜드의 새로운 SSD "Crucial MX300"도 전시됐는데 현 시점에서 TLC 낸드 플래시 메모리를 채용한 것 이외의 세부 내용은 불명. 이들 마이크론의 신제품에 대해서는 6월 2일의 설명회 개최 후 자세히 다룰 예정.


출처 - http://pc.watch.impress.co.jp/docs/news/event/1002769.html

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01_s.jpg

인텔이 발표한 Xeon E5 v4와 인텔 SSD DC 각 제품     


인텔은 3월 31일(현지 시간) 데이터 센터/서버용 제품을 발표했다. 프로세서는 별도 기사에 Xeon E5 v4(개발 코드 네임:Broadwell-EP)가 발표되고 동시에 서버용 SSD 제품이 발표되고 있다.

 

업계 최고 밀도의 3D NAND 플래시 메모리를 채용한 P3520/3320

 

이번에 인텔이 발표한 것은 데이터 센터/서버용 SSD 브랜드의 Intel SSD DC 시리즈 브랜드의 Intel SSD DC P3520/3320. 이미 투입되고 있는 Intel SSD DC P3700/3600/3500의 하위 제품이다.

     

02_s.jpg
이번에 발표된 Intel SSD DC P3520/3320의 위치는 Intel SSD DC P3700/3600/3500의 하위 모델 (출처:Intel Corporation, Cloud coverage Intel PCIe*SSDs for all Cloud storage needs, 2016년)


최대 특징은 인텔이 마이크론 테크놀로지와 공동으로 개발해 온 3D NAND 플래시 메모리를 이용해 만든다는 것이다. 종래의 2D NAND 플래시 메모리는 1개의 층밖에 없는 형태지만 3D NAND는 세로 방향으로 복수의 층을 적층해 만들어지기 때문에 2D NAND 대비 높은 밀도를 실현하게 된다.

 

이 3D NAND 플래시 메모리는 삼성전자, 도시바/샌디스크 연합 등 다른 캠프보다 고밀도인 것이 특징이며 이번에 인텔은 "업계 최고 밀도"로서 그 점을 홍보하고 있다.


 

 


 

폼 팩터는 2.5인치 HDD와 동형의 박스형과 HHHL(x4)로 불리는 PCI Express 확장 카드와 같은 형상의 2가지가 준비되어 있다. 인터페이스의 프로토콜은 모두 NVM Express. 용량은 HHHL이 2TB와 1.2TB, 2.5인치는 이와 함께 450GB가 준비되어 있다.

 

피크 성능은 4KB 랜덤 읽기가 365K IOPS, 4KB 랜덤 쓰기가 22K IOPS. 인텔에 따르면 NVMe를 채용하고 있는 SATA의 병목점을 회피하고 NAND 플래시 메모리가 가진 최대 성능을 발휘할 수 있다는 것으로 SATA 접속 Intel SSD DC S3510과 비교하여 4KB 랜덤 읽기에서 약 5배, 레이턴시는 1/4이 되고 있다.


 

 


 

가격 등은 현 시점에서는 미공표지만 P3320은 2분기에 P3520은 여름에 투입될 예정이라고 설명한다.


인텔 SSD DC D3700/3600은 NVM Express 인터페이스를 채용한 PCI Express SSD. 폼 팩터는 2.5인치지만 D3700이 1.6TB와 800GB, D3600이 1TB와 2TB로 라인업된다.

 

최대 특징은 인텔의 PCI Express SSD로는 처음으로 데이터 포트가 듀얼이 되고 있는 것이다. 현재 서버 등으로 스토리지의 용장성을 실현하는 경우에는 SAS(Serial Attached Scsi) 듀얼 포트 기능을 이용하는 것이 적지 않다. 그러나 SAS는 최신 SAS-3에서도 최대 전송 속도는 12Gbps일 뿐 고속 SSD의 경우에는 병목이 되는 경우가 많다.

 

여기서 인텔은 SSD DC D3700/3600에 NVM Express의 인터페이스를 채용하고 듀얼 포트로 구성함으로써 성능과 용장성 양쪽을 실현하고 있다. 인텔에 따르면 4KB 랜덤 읽기에서 SAS SSD의 3.9배 성능을 발휘할 수 있다고 한다.

 

격 등은 현 시점에서는 미공표이지만 이미 샘플 출하를 시작했고 제품은 3개월 이내에 출하가 시작될 예정이다.

 


출처 - http://pc.watch.impress.co.jp/docs/news/20160401_751080.html

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